DocumentCode
2980224
Title
Evaluation of 35nm MOSFET capacitance components in PSP compact model
Author
Dideban, Daryoosh ; Cheng, Binjie ; Moezi, Negin ; Wang, Xingsheng ; Asenov, Asen
Author_Institution
Device Modelling Group, Univ. of Glasgow, Glasgow, UK
fYear
2010
fDate
11-13 May 2010
Firstpage
368
Lastpage
371
Abstract
In this paper the capacitance components of the PSP compact model which is selected as successor of BSIM4 by the Compact Modelling Council (CMC) are investigated and simulated in HSPICE for the state of the art 35nm MOSFET device. The simulations are compared with TCAD results in both transcapacitance components between the device terminals and time domain to show the impact of accuracy of compact model on real circuit simulations.
Keywords
Capacitance; Circuit simulation; Computational modeling; Data mining; Geometry; MOSFET circuits; Parameter extraction; Physics; Surface fitting; Threshold voltage; Compact Modelling; PSP; TCAD; Transcapacitance; nanoCMOS;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering (ICEE), 2010 18th Iranian Conference on
Conference_Location
Isfahan, Iran
Print_ISBN
978-1-4244-6760-0
Type
conf
DOI
10.1109/IRANIANCEE.2010.5507045
Filename
5507045
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