DocumentCode
2980308
Title
Influence of STI-Induced Mechnical Stress In Kink Effect of 65nm PD SOI CMOS Devices
Author
Lin, I. ; Su, V. ; kuo, jay ; Lee, R. ; Lin, G. ; Chen, D. ; Yeh, C. ; Tsai, C. ; Ma, M.
Author_Institution
Nat. Taiwan Univ., Taipei
fYear
2007
fDate
20-22 Dec. 2007
Firstpage
107
Lastpage
108
Abstract
The mechanical stress induced by shallow trench isolation (STI) may affect the performance of CMOS devices. Mechanical stress may change workfunction, effective mass, carrrier mobility, and junction leakage. This paper reports the influence of STI-induced mechanical stress in the kink effect of a 65 nm PD SOI NMOS device.
Keywords
CMOS integrated circuits; carrier mobility; leakage currents; silicon-on-insulator; PD SOI CMOS devices; PD SOI NMOS device; STI-induced mechanical stress; carrrier mobility; effective mass; junction leakage; kink effect; shallow trench isolation; size 65 nm; Effective mass; Length measurement; MOS devices; Medical simulation; Medical tests; Occupational stress; Photonic band gap; Textile industry; Thin film devices; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-0637-1
Electronic_ISBN
978-1-4244-0637-1
Type
conf
DOI
10.1109/EDSSC.2007.4450073
Filename
4450073
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