Title :
Influence of wave function penetration on short channel effects in nanoscale double gate MOSFETs
Author :
Khan, Asif Islam ; Ashraf, Md.Khalid ; Haque, Anisul
Author_Institution :
Bangladesh Univ. of Eng. & Technol., Dhaka
Abstract :
Influence of wave function penetration on short channel effects (SCEs) in nanoscale double gate (DG) MOSFETs are examined. Wave function penetration effects result in degradation of off-state current and reduction of threshold voltage in DG MOSFETs. Effects of wave function penetration on subthreshold swing and drain induced barrier lowering are insignificant.
Keywords :
MOSFET; nanotechnology; drain induced barrier lowering; nanoscale double gate MOSFET; off-state current; short channel effects; subthreshold swing; threshold voltage; wave function penetration; Boundary conditions; Electrons; Electrostatics; Hafnium oxide; MOSFETs; Nanoscale devices; Poisson equations; Silicon; Threshold voltage; Wave functions; DG MOSFET; Wave function penetration; drain induced barrier lowering; off-state current; quantum ballistic transport; short channel effects; subthreshold swing; threshold voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450074
