DocumentCode
2980329
Title
Influence of wave function penetration on short channel effects in nanoscale double gate MOSFETs
Author
Khan, Asif Islam ; Ashraf, Md.Khalid ; Haque, Anisul
Author_Institution
Bangladesh Univ. of Eng. & Technol., Dhaka
fYear
2007
fDate
20-22 Dec. 2007
Firstpage
109
Lastpage
112
Abstract
Influence of wave function penetration on short channel effects (SCEs) in nanoscale double gate (DG) MOSFETs are examined. Wave function penetration effects result in degradation of off-state current and reduction of threshold voltage in DG MOSFETs. Effects of wave function penetration on subthreshold swing and drain induced barrier lowering are insignificant.
Keywords
MOSFET; nanotechnology; drain induced barrier lowering; nanoscale double gate MOSFET; off-state current; short channel effects; subthreshold swing; threshold voltage; wave function penetration; Boundary conditions; Electrons; Electrostatics; Hafnium oxide; MOSFETs; Nanoscale devices; Poisson equations; Silicon; Threshold voltage; Wave functions; DG MOSFET; Wave function penetration; drain induced barrier lowering; off-state current; quantum ballistic transport; short channel effects; subthreshold swing; threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-0637-1
Electronic_ISBN
978-1-4244-0637-1
Type
conf
DOI
10.1109/EDSSC.2007.4450074
Filename
4450074
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