Monte Carlo particle modeling of electron velocity overshoot effect in MSM photodiodes

Author

Ryzhii, M. ; Willander, M. ; Khmyrova, I. ; Ryzhii, V.

Author_Institution

Chalmers Univ. of Technol., Goteborg, Sweden

fYear

1998

fDate

12-13 Mar 1998

Firstpage

46

Lastpage

53

Abstract

We present a numerical study of metal-semiconductor-metal (MSM) photodiodes based on a planar structure composed of interdigitated Schottky contacts on top of a thin GaAs absorbing layer with lateral light input. A self-consistent ensemble Monte Carlo (MC) particle method with the Fourier transform of the calculated transient photocurrent is used to obtain the frequency dependent responsivity. It is shown that the MSM photodiodes can exhibit marked responsivity in terahertz range of signal frequencies even for contact spacing about few tenth of micrometer. The results of the MC simulation are discussed invoking proposed analytical model

Keywords

Monte Carlo methods; metal-semiconductor-metal structures; photodiodes; semiconductor device models; Fourier transform; GaAs; MSM photodiode; Monte Carlo particle model; electron velocity overshoot; interdigitated Schottky contact; numerical simulation; planar structure; terahertz frequency responsivity; transient photocurrent; Bandwidth; Electrons; Fingers; Frequency; Gallium arsenide; Monte Carlo methods; Photoconductivity; Photodetectors; Photodiodes; Schottky barriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Modeling of Devices Based on Low-Dimensional Structures, 1998. Proceedings., Second International Workshop on

Conference_Location

Aizu-Wakamatsu

Print_ISBN

0-8186-8682-0

Type

conf

DOI

10.1109/LDS.1998.714533

Filename

714533