Extension of the measurement range of MOS dosimeters using radiation induced charge neutralization

This work proposes a new biasing technique to extend the dose measurement range of MOS dosimeters. The technique consists on alternating stages of positive oxide charge buildup with stages of radiation induced charge neutralization, maintaining an uniform sensitivity along the whole measurement. The technique was applied with 70 nm MOS dosimeters, extending the dose measurement range from less than a kilogray to more than 675 kGy without showing wear effects. An initial saturation of interface traps creation ensures repeatability in the responses.