Analysis of Charge Retention Characteristics for Metal and Semiconductor Nanocrystal Non-volatile Memories

Author

Guan, Weihua ; Long, Shibing ; Jia, Rui ; Liu, Qi ; Hu, Yuan ; Wang, Qin ; Liu, Ming

Author_Institution

Chinese Acad. of Sci., Beijing

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

141

Lastpage

144

Abstract

A charge retention model for nanocrystal MOSFET memory structure is proposed, taken into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memories over their semiconductor counterparts observed in the experiment. Simulation results are in consistent with experimental data, which confirms the validity of this model. The impact of nanocrystal size, tunneling dielectric material (especially high-k dielectrics) and thickness on the retention characteristics are investigated for both of the metal nanocrystal and semiconductor nanocrystal memories.

Keywords

MOSFET; high-k dielectric thin films; memory architecture; nanostructured materials; semiconductor storage; charge retention characteristics; high-k dielectrics; metal nanocrystal memories; metal nanocrystal nonvolatile memories; nanocrystal MOSFET memory structure; nanocrystal size; quantum confinement effect; semiconductor counterparts; semiconductor nanocrystal memories; semiconductor nanocrystal nonvolatile memories; tunneling dielectric material; Dielectric materials; Energy states; High-K gate dielectrics; MOSFET circuits; Nanocrystals; Nonvolatile memory; Permittivity; Potential well; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450082

Filename

4450082