Title :
Improved large-area, two-terminal InP/Ga0.47In0.53 As tandem solar cells
Author :
Wanlass, M.W. ; Ward, J.S. ; Emery, K.A. ; Duda, A. ; Coutts, T.J.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
Progress in the development of high-efficiency, large-area, two-terminal InP/Ga0.47In0.53AS tandem solar cells is reported. Five tandem cells with total areas of ~4 cm2, with 1-sun AM0 efficiencies ranging from 19.4% to 21.1%, were prepared for the STRV-1 satellite solar cell flight experiment. Additionally, an ~1 cm2 tandem cell with a 1-sun AM0 efficiency of 22.2% has been confirmed. Possible further improvements and performance potential are discussed
Keywords :
III-V semiconductors; artificial satellites; gallium arsenide; indium compounds; photovoltaic power systems; solar cells; space vehicle power plants; 1-sun AM0 efficiencies; 19.4 to 22.2 percent; InP-Ga0.47In0.53As; STRV-1 satellite solar cell flight experiment; high-efficiency; large-area; two-terminal InP/Ga0.47In0.53As tandem solar cells; Doping; Epitaxial growth; Fabrication; Indium phosphide; Inductors; Laboratories; Photovoltaic cells; Photovoltaic systems; Satellites; Solar power generation;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520549
