Title :
Electrical Properties of Bilayer SrBi2Ta2O9/Ba(Zr0.1 Ti0.9)O3 Thin Films for Ferroelectric Random Access Memory Applications
Author :
Tzou, W.C. ; Chen, K.H. ; Yang, C.F. ; Li, C.C.
Author_Institution :
Southern Taiwan Univ., Taipei
Abstract :
Ferroelectric thin films of SrBi2Ta2O9 (SBT) or bilayered SrBi2Ta2O9/Ba(Zr0.1Ti0.9)O3 (SBT/BZT) are successfully deposited on Si substrate under the optimal RF magnetron sputtering conditions, and their electrical and ferroelectric characteristics are discussed. The memory window, capacitance and leakage current density of MFS structures under different oxygen concentrations are also reported. The memory window of bilayered SBT/BZT structure shows larger than one of single layer SBT structure. Besides, the bilayered SBT/BZT structure exhibits a ferroelectric behavior with a remanent polarization of 8 muC/cm2 and a coercive field of and 130 kV/cm.
Keywords :
barium compounds; bismuth compounds; ferroelectric storage; ferroelectric thin films; oxygen compounds; random-access storage; sputtering; strontium compounds; tantalum compounds; titanium compounds; zirconium compounds; SrBi2Ta2O9-Ba(Zr0.1Ti0.9)O3; capacitance; electrical properties; ferroelectric random access memory; ferroelectric thin films; leakage current density; memory window; optimal RF magnetron sputtering conditions; oxygen concentrations; remanent polarization; Dielectric substrates; Dielectric thin films; Ferroelectric materials; Leakage current; Nonvolatile memory; Polarization; Radio frequency; Random access memory; Semiconductor thin films; Sputtering;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450089
