DocumentCode
2980608
Title
Complemental theory for vertical transport in semiconductor superlattices
Author
Morifuji, M. ; Sakamoto, A. ; Hamaguchi, C.
Author_Institution
Dept. of Electron. Eng., Osaka Univ., Japan
fYear
1998
fDate
12-13 Mar 1998
Firstpage
62
Lastpage
66
Abstract
In this paper, we present a unified picture which can describe transport phenomena independent on applied electric field. Based on the unified picture and by means of the Monte Carlo simulation, we calculate drift velocities of electrons in a superlattice, taking LO phonon scattering and impurity scattering into account. When impurity density is low or electric field is high, electrons are easily accelerated to the edge of the Brillouin zone, and Bloch oscillation is realized. As a result of the Bloch oscillation, localized Stark-ladder states are formed and hopping transport between the Stark-ladder states is realized. With increasing impurities, electrons are scattered frequently and delocalization of Stark-ladder states takes place. In this case, band transport described in the momentum-space becomes important. Crossover between band transport and hopping transport is investigated and discussed
Keywords
Brillouin zones; Monte Carlo methods; Stark effect; electron-phonon interactions; hopping conduction; impurity scattering; semiconductor superlattices; Bloch oscillation; Brillouin zone; LO phonon scattering; Monte Carlo simulation; Stark ladder; band transport; complemental theory; drift velocity; electric field; hopping transport; impurity scattering; semiconductor superlattice; vertical transport; Semiconductor superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Modeling of Devices Based on Low-Dimensional Structures, 1998. Proceedings., Second International Workshop on
Conference_Location
Aizu-Wakamatsu
Print_ISBN
0-8186-8682-0
Type
conf
DOI
10.1109/LDS.1998.714535
Filename
714535
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