Title :
High-speed single-electron memory: cell design and architecture
Author :
Mizuta, Hiroshi ; Williams, David ; Katayama, Kozo ; Muller, Heinz-Olaf ; Nakazato, Kazuo ; Ahmed, Haroon
Author_Institution :
Cambridge Lab., Hitachi Eur. Ltd., Cambridge, UK
Abstract :
A new silicon-based single-electron memory cell is presented for use as a high-speed RAM. Novel architecture and operation schemes are evaluated by conducting Monte Carlo single-electron simulations. By performing transient waveform analysis, a high-speed write operation is demonstrated with a write time shorter than 10 nsec
Keywords :
Monte Carlo methods; memory architecture; quantum interference devices; random-access storage; semiconductor storage; transient analysis; waveform analysis; 10 ns; Monte Carlo simulation; RAM; Si; architecture; cell design; high speed single electron memory; transient waveform analysis; Analytical models; Circuit simulation; Electrodes; Hysteresis; Laboratories; Magnetic tunneling; Random access memory; Single electron memory; Voltage; Writing;
Conference_Titel :
Physics and Modeling of Devices Based on Low-Dimensional Structures, 1998. Proceedings., Second International Workshop on
Conference_Location :
Aizu-Wakamatsu
Print_ISBN :
0-8186-8682-0
DOI :
10.1109/LDS.1998.714536
