Title :
Modeling of Post Soft Breakdown Conduction through Ultrathin High-k Gate Dielectrics
Author :
Shahil, K.M.Farhan ; Arafat, Md Nayeem ; Khosru, Quazi D M ; Khan, M. Rezwan
Author_Institution :
Bangladesh Univ. of Eng. & Technol.(BUET), Dhaka
Abstract :
A Quantum Mechanical model is presented to describe the post Soft Breakdown (SBD) phenomena for MOS structure with ultrathin high-k gate dielectrics. We model the SBD event by considering a lowered barrier height at the SBD spot area. The current density through fresh stack gate oxide area and the SBD area are evaluated using a Quantum Mechanical Wave Impedance method. Simulated results for post SBD current with the reported experimental data reveal good agreement and hence important SBD parameters such as barrier height, carrier effective mass, SBD spot area and imaginary potential are extracted.
Keywords :
MIS devices; current density; dielectric materials; elastic waves; quantum theory; MOS structure; mechanical wave impedance method; post soft breakdown conduction modeling; quantum mechanical model; soft breakdown phenomena; stack gate oxide area; ultrathin high-k gate dielectrics; Data mining; Dielectric breakdown; Dielectric substrates; Effective mass; Electric breakdown; Electron traps; High-K gate dielectrics; Quantum mechanics; Stress; Tunneling;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450091
