Title :
Advanced operational techniques and pn-pn-pn structures for high-power silicon carbide gate turn-off thyristors
Author :
Shah, P.B. ; Geil, B.R. ; Ervin, M.E. ; Griffin, T.E. ; Bayne, S. ; Jones, K.A. ; Oldham, T.R.
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
Abstract :
SiC GTO thyristors may soon be the best available choice for very high-power switching. At this time, we have developed new operational techniques, growth requirements and pn-pn-pn type structures to address the issues of high on-state voltage, poor turn-off gain, and inability to reach predicted breakover voltages. We present these findings using experimental measurements and numerical simulations
Keywords :
p-n junctions; power semiconductor switches; semiconductor materials; silicon compounds; thyristors; SiC; SiC GTO thyristors; growth requirements; high on-state voltage; high-power silicon carbide gate turn-off thyristors; operational techniques; pn-pn-pn structures; poor turn-off gain; predicted breakover voltages; very high-power switching; Anodes; Cathodes; Circuit simulation; Electron devices; Ionization; Neodymium; Semiconductor process modeling; Silicon carbide; Thyristors; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2001. APEC 2001. Sixteenth Annual IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-6618-2
DOI :
10.1109/APEC.2001.912522
