• DocumentCode
    2980656
  • Title

    Coulomb blockade and higher order tunneling effect on magnetoresistance in ultrasmall ferromagnetic tunnel junctions

  • Author

    Iwabuchi, Shuichi ; Tanamoto, Tetsufumi ; Kitawaki, Reiko

  • Author_Institution
    Dept. of Phys., Nara Women´´s Univ., Japan
  • fYear
    1998
  • fDate
    12-13 Mar 1998
  • Firstpage
    78
  • Lastpage
    82
  • Abstract
    Coulomb blockade and negative magnetoresistance of ultrasmall ferromagnetic tunnel junctions are studied based on the Feynman path integral approach. It is shown that the change in magnetoresistance is considerably enhanced in the Coulomb blockade regime. This is due to the nonlinear current-voltage characteristics caused by the higher order tunneling processes which set in since negative magnetoresistance tends to make Coulomb blockade unstable. Results obtained are qualitatively in good agreement with recent experimental findings. Coulomb blockade and the magnetoresistance in ultrasmall ferromagnetic double junction are also discussed briefly
  • Keywords
    Coulomb blockade; magnetoresistance; tunnelling; Coulomb blockade; Feynman path integral; negative magnetoresistance; nonlinear current-voltage characteristics; single electron tunneling; ultrasmall ferromagnetic tunnel junction; Colossal magnetoresistance; Current-voltage characteristics; Electrodes; Electrons; Enhanced magnetoresistance; Josephson junctions; Magnetic fields; Physics; Tunneling magnetoresistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics and Modeling of Devices Based on Low-Dimensional Structures, 1998. Proceedings., Second International Workshop on
  • Conference_Location
    Aizu-Wakamatsu
  • Print_ISBN
    0-8186-8682-0
  • Type

    conf

  • DOI
    10.1109/LDS.1998.714538
  • Filename
    714538