Evaluation of high-voltage IGBT for series resonant DC-DC converter application

Author

Trivedi, M. ; Shenai, K. ; Joerg, P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

1237

Abstract

This paper presents a detailed study of the performance of a high-power IGBT module for application in a series resonant DC-DC converter. A novel test circuit has been developed that permits flexibility in test conditions without the complexity of full circuit operation. Experimental measurements are supported by finite element mixed device and circuit simulations. It is shown that considerable reduction in switching power loss is possible by a suitable choice of switching sequence. The numerical simulation structure very closely replicates the measured characteristics. With this initial simulation structure, full structural optimization can be explored for improved performance in the target application

Keywords

DC-DC power convertors; circuit simulation; finite element analysis; insulated gate bipolar transistors; losses; resonant power convertors; semiconductor device testing; switching circuits; circuit simulation; device simulation; finite element simulation; high-voltage IGBT; numerical simulation structure; series resonant DC-DC converter; structural optimization; switching power loss reduction; switching sequence; test circuit; Circuit testing; DC-DC power converters; Frequency; Insulated gate bipolar transistors; Power transformer insulation; Rail transportation; Resonance; Switching converters; Switching loss; Zero current switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2001. APEC 2001. Sixteenth Annual IEEE

Conference_Location

Anaheim, CA

Print_ISBN

0-7803-6618-2

Type

conf

DOI

10.1109/APEC.2001.912523

Filename

912523