Title :
Improved Performance for OTFT with HfTiO2 as gate dielectric by N2O annealing
Author :
Tang, W.M. ; Cheng, K.H. ; Leung, C.H. ; Lai, P.T. ; Xu, J.P. ; Che, C.M.
Author_Institution :
Univ. of Hong Kong, Hong Kong
Abstract :
OTFTs with HfTiO2 as gate dielectric have been successfully fabricated. The devices show small threshold voltage and subthreshold slope, and thus are suitable for low-voltage and low-power applications. This work also finds that OTFT with gate dielectric annealed in N2O has larger dielectric constant, smaller threshold voltage, smaller subthreshold slope and larger on/off ratio than the N2-annealed sample. This demonstrates that the N2O annealing is an important surface treatment for preparing a high-quality insulator/organic interface.
Keywords :
annealing; dielectric devices; hafnium compounds; low-power electronics; organic semiconductors; thin film transistors; HfTiO2; OTFT; annealing; dielectric constant; dielectric gate; high-quality insulator-organic interface; low-power applications; organic thin-film transistor; surface treatment; Annealing; Dielectric constant; Dielectrics and electrical insulation; Hafnium; High K dielectric materials; High-K gate dielectrics; Organic thin film transistors; Pentacene; Thin film transistors; Threshold voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450094
