DocumentCode
2980696
Title
The potential of electron-nuclear spin interactions for use in quantum information processing
Author
Hitt, G.W. ; Isakovic, A.F.
Author_Institution
Khalifa Univ. of Sci., Technol. & Res., Abu Dhabi, United Arab Emirates
fYear
2011
fDate
19-22 Feb. 2011
Firstpage
154
Lastpage
157
Abstract
Recent experiments have demonstrated that an ensemble of spin polarized electrons can transfer its spin polarization to the spin of the host atomic nuclei in a “spin-friendly” semiconductor like gallium arsenide (GaAs). In this paper, we analyze this process in terms of its efficiency for using natural nuclear spin in a solid state quantum computer. Among the appealing features of the proposed design is the potential to mate it to existing memory technology. We propose a realizable and scalable model of such a device based on growth-implanted quantum dots in a III-V semiconductor matrix and analyze the feasibility of transferring spin polarized information to such a system, keeping it stored in the system and processing it.
Keywords
III-V semiconductors; gallium compounds; nuclear spin; quantum computing; III-V semiconductor matrix; electron-nuclear spin interactions; gallium arsenide; host atomic nuclei; natural nuclear spin; quantum dots; quantum information processing; solid state quantum computer; spin polarized electrons; Films; Iron; Magnetic field measurement; Magnetic fields; Magnetization; Polarization; Temperature dependence; Schottky diodes; electroluminescence; magnetic anisotropy; polarization; quantum effect semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
GCC Conference and Exhibition (GCC), 2011 IEEE
Conference_Location
Dubai
Print_ISBN
978-1-61284-118-2
Type
conf
DOI
10.1109/IEEEGCC.2011.5752488
Filename
5752488
Link To Document