• DocumentCode
    2980696
  • Title

    The potential of electron-nuclear spin interactions for use in quantum information processing

  • Author

    Hitt, G.W. ; Isakovic, A.F.

  • Author_Institution
    Khalifa Univ. of Sci., Technol. & Res., Abu Dhabi, United Arab Emirates
  • fYear
    2011
  • fDate
    19-22 Feb. 2011
  • Firstpage
    154
  • Lastpage
    157
  • Abstract
    Recent experiments have demonstrated that an ensemble of spin polarized electrons can transfer its spin polarization to the spin of the host atomic nuclei in a “spin-friendly” semiconductor like gallium arsenide (GaAs). In this paper, we analyze this process in terms of its efficiency for using natural nuclear spin in a solid state quantum computer. Among the appealing features of the proposed design is the potential to mate it to existing memory technology. We propose a realizable and scalable model of such a device based on growth-implanted quantum dots in a III-V semiconductor matrix and analyze the feasibility of transferring spin polarized information to such a system, keeping it stored in the system and processing it.
  • Keywords
    III-V semiconductors; gallium compounds; nuclear spin; quantum computing; III-V semiconductor matrix; electron-nuclear spin interactions; gallium arsenide; host atomic nuclei; natural nuclear spin; quantum dots; quantum information processing; solid state quantum computer; spin polarized electrons; Films; Iron; Magnetic field measurement; Magnetic fields; Magnetization; Polarization; Temperature dependence; Schottky diodes; electroluminescence; magnetic anisotropy; polarization; quantum effect semiconductor devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    GCC Conference and Exhibition (GCC), 2011 IEEE
  • Conference_Location
    Dubai
  • Print_ISBN
    978-1-61284-118-2
  • Type

    conf

  • DOI
    10.1109/IEEEGCC.2011.5752488
  • Filename
    5752488