DocumentCode :
2980740
Title :
Room temperature operation of resonant tunneling quantum dot infrared detectors
Author :
Chakrabarti, S. ; Su, X.H. ; Ariyawansa, G. ; Perera, A.G.U. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
2
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
1076
Abstract :
We present a novel tunnel quantum dot infrared photodetector which exhibit large photoresponse at 6μm and 17μm at 300K and ultra-low dark currents. Peak detectivity is 1.52×107 cm·Hz12//W at 300K for 17μm response.
Keywords :
infrared detectors; photoconductivity; photodetectors; resonant tunnelling devices; semiconductor quantum dots; 17 micron; 293 to 298 K; 300 K; 6 micron; infrared photodetector; peak detectivity; quantum dot infrared detectors; resonant tunneling; room temperature operation; ultra-low dark currents; Current measurement; Dark current; Electrons; Gallium arsenide; Indium gallium arsenide; Infrared detectors; Quantum dots; Resonant tunneling devices; Temperature; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.202029
Filename :
1573095
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2980740
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