DocumentCode
2980740
Title
Room temperature operation of resonant tunneling quantum dot infrared detectors
Author
Chakrabarti, S. ; Su, X.H. ; Ariyawansa, G. ; Perera, A.G.U. ; Bhattacharya, P.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
2
fYear
2005
fDate
22-27 May 2005
Firstpage
1076
Abstract
We present a novel tunnel quantum dot infrared photodetector which exhibit large photoresponse at 6μm and 17μm at 300K and ultra-low dark currents. Peak detectivity is 1.52×107 cm·Hz12//W at 300K for 17μm response.
Keywords
infrared detectors; photoconductivity; photodetectors; resonant tunnelling devices; semiconductor quantum dots; 17 micron; 293 to 298 K; 300 K; 6 micron; infrared photodetector; peak detectivity; quantum dot infrared detectors; resonant tunneling; room temperature operation; ultra-low dark currents; Current measurement; Dark current; Electrons; Gallium arsenide; Indium gallium arsenide; Infrared detectors; Quantum dots; Resonant tunneling devices; Temperature; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.202029
Filename
1573095
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