• DocumentCode
    2980740
  • Title

    Room temperature operation of resonant tunneling quantum dot infrared detectors

  • Author

    Chakrabarti, S. ; Su, X.H. ; Ariyawansa, G. ; Perera, A.G.U. ; Bhattacharya, P.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    2
  • fYear
    2005
  • fDate
    22-27 May 2005
  • Firstpage
    1076
  • Abstract
    We present a novel tunnel quantum dot infrared photodetector which exhibit large photoresponse at 6μm and 17μm at 300K and ultra-low dark currents. Peak detectivity is 1.52×107 cm·Hz12//W at 300K for 17μm response.
  • Keywords
    infrared detectors; photoconductivity; photodetectors; resonant tunnelling devices; semiconductor quantum dots; 17 micron; 293 to 298 K; 300 K; 6 micron; infrared photodetector; peak detectivity; quantum dot infrared detectors; resonant tunneling; room temperature operation; ultra-low dark currents; Current measurement; Dark current; Electrons; Gallium arsenide; Indium gallium arsenide; Infrared detectors; Quantum dots; Resonant tunneling devices; Temperature; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.202029
  • Filename
    1573095