DocumentCode :
2980765
Title :
Structure and ferroelectric properties of sputtered PMNT thin films
Author :
Wasa, K. ; Kanno, I. ; Suzuki, T. ; Seo, S.H. ; Noh, D.Y. ; Okino, H. ; Yamamoto, T.
Author_Institution :
Fac. of Sci., Yokohama City Univ., Japan
fYear :
2004
fDate :
23-27 Aug. 2004
Firstpage :
11
Lastpage :
16
Abstract :
Thin films of strain free single c-domain / single crystal (PbMg13/Nb23/O3)1-x(PbTiO3)x, x=0-0.4 were epitaxially grown on [001]SrTiO3 and [001]MgO substrates by magnetron sputtering. The sputtered PMNT thin films showed bulk relaxor-like frequency dispersion in their dielectric properties but exhibited strongly diffused temperature anomaly unlikely to bulk PMNT. The d33 and d31 values at MPB composition lied 200-300pC/N and 70-100pC/N, respectively. These values were larger than those of PZT ceramics, but 10 to 15% of PMNT single crystal values.
Keywords :
epitaxial growth; epitaxial layers; ferroelectric materials; ferroelectric thin films; lead compounds; piezoelectricity; sputter deposition; (PbMg0.33Nb0.66O3)1-x(PbTiO3)x; MPB composition; MgO; PZT ceramics; SrTiO3; bulk relaxor-like frequency dispersion; dielectric properties; epitaxially grow; ferroelectric properties; magnetron sputtering; single crystal thin films; sputtered PMNT thin films; strain free single c-domain thin films; strongly diffused temperature anomaly; thin film structure; Capacitive sensors; Ceramics; Chemicals; Dielectric substrates; Dielectric thin films; Ferroelectric materials; Niobium; Powders; Sputtering; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2004. ISAF-04. 2004 14th IEEE International Symposium on
ISSN :
1099-4734
Print_ISBN :
0-7803-8410-5
Type :
conf
DOI :
10.1109/ISAF.2004.1418326
Filename :
1418326
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2980765
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