Title :
High-voltage (600 to 3 kV) silicon carbide diode development
Author :
Dufrene, J.B. ; Carter, G. ; Casady, J.B. ; Sankin, I. ; Sheridan, D.C. ; Draper, W. ; Mazzola, M.
Abstract :
The design, fabrication and testing of silicon carbide rectifiers are examined. Both Schottky (600 V to 1 kV) and junction barrier Schottky (JBS) (1 kV to 3 kV) diodes are investigated in terms of practical design, manufacturing and cost issues. Emphases on material quality and edge termination techniques for large scaleable devices are discussed. Using high quality epitaxial layers and both implanted guard ring, and implanted single-zone junction termination extension (JTE) edge termination techniques, 1 kV Schottky and 2.5 kV JBS diodes are demonstrated
Keywords :
AC-DC power convertors; Schottky diodes; power semiconductor diodes; power semiconductor switches; rectifying circuits; silicon compounds; switching circuits; 1 kV; 1 to 3 kV; 2.5 kV; 600 V to 3 kV; HV SiC diode development; Schottky diodes; SiC; cost; design; edge termination techniques; epitaxial layers; fabrication; implanted guard ring; junction barrier Schottky diodes; manufacturing; rectifiers; single-zone junction termination extension; testing; Current density; Fabrication; Forward contracts; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Silicon devices; Thermal conductivity; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2001. APEC 2001. Sixteenth Annual IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-6618-2
DOI :
10.1109/APEC.2001.912526
