High-voltage (600 to 3 kV) silicon carbide diode development

Author

Dufrene, J.B. ; Carter, G. ; Casady, J.B. ; Sankin, I. ; Sheridan, D.C. ; Draper, W. ; Mazzola, M.

Volume

2

fYear

2001

fDate

2001

Firstpage

1253

Abstract

The design, fabrication and testing of silicon carbide rectifiers are examined. Both Schottky (600 V to 1 kV) and junction barrier Schottky (JBS) (1 kV to 3 kV) diodes are investigated in terms of practical design, manufacturing and cost issues. Emphases on material quality and edge termination techniques for large scaleable devices are discussed. Using high quality epitaxial layers and both implanted guard ring, and implanted single-zone junction termination extension (JTE) edge termination techniques, 1 kV Schottky and 2.5 kV JBS diodes are demonstrated

Keywords

AC-DC power convertors; Schottky diodes; power semiconductor diodes; power semiconductor switches; rectifying circuits; silicon compounds; switching circuits; 1 kV; 1 to 3 kV; 2.5 kV; 600 V to 3 kV; HV SiC diode development; Schottky diodes; SiC; cost; design; edge termination techniques; epitaxial layers; fabrication; implanted guard ring; junction barrier Schottky diodes; manufacturing; rectifiers; single-zone junction termination extension; testing; Current density; Fabrication; Forward contracts; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Silicon devices; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2001. APEC 2001. Sixteenth Annual IEEE

Conference_Location

Anaheim, CA

Print_ISBN

0-7803-6618-2

Type

conf

DOI

10.1109/APEC.2001.912526

Filename

912526