DocumentCode
2980808
Title
The Fabrication of the AlGaInP MQW Circular Ring Resonator Semiconductor Laser
Author
Shih, M.C. ; Wang, S.C. ; Ho, C.E.
Author_Institution
Nat. Kaohsiung Univ., Kaohsiung
fYear
2007
fDate
20-22 Dec. 2007
Firstpage
213
Lastpage
215
Abstract
Fabrication of an AlGalnP multiple quantum well semiconductor with a circular ridge waveguide ring resonator of 100 um diameter and 10 um width by using a novel UV laser-assisted cryo-etching technique is presented. It shows single-modes output at the threshold current density 82.5 A/cm2 and 10 KHz pulse mode operation. The ring laser provides a promising photonic device for opto-electronic system integration applications.
Keywords
aluminium compounds; gallium compounds; laser beam etching; quantum well lasers; resonators; semiconductor quantum wells; AlGaInP; UV laser-assisted cryo-etching; circular ridge waveguide ring resonator; circular ring resonator semiconductor laser; multiple quantum well semiconductor; Laser modes; Optical device fabrication; Optical ring resonators; Quantum well devices; Quantum well lasers; Ring lasers; Semiconductor lasers; Semiconductor waveguides; Threshold current; Waveguide lasers; Semiconductor lasers; UV laser etching; circular ring lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-0637-1
Electronic_ISBN
978-1-4244-0637-1
Type
conf
DOI
10.1109/EDSSC.2007.4450100
Filename
4450100
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