DocumentCode
2980821
Title
The Fabrication and Characterization of InGaAs Oxide-Confined Resonant-Cavity Light-Emitting Diodes Grown on GaAs Substrate
Author
Wang, Zhi-Wen ; Su, Yan-Kuin ; Huang, Chun-Yuan ; Chen, Wei-Cheng ; Yu, Hsin-Chieh
Author_Institution
Nat. Cheng Kung Univ., Tainan
fYear
2007
fDate
20-22 Dec. 2007
Firstpage
217
Lastpage
220
Abstract
In this article, we have demonstrated the fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes (OC-RCLEDs) which emitted at 1125 nm. The output power can be improved by lateral oxidation from the sidewall of the RCLEDs due to the reduction of the light absorption beneath metal ring. The maximum output power of oxide-confined devices is 3.25 mW at 500 mA and the turn-on voltage is about 1.7 V.
Keywords
cavity resonators; gallium arsenide; light absorption; light emitting diodes; GaAs substrate; InGaAs oxide-confined resonant-cavity light-emitting diodes OC-RCLED; lateral oxidation; light absorption; Apertures; Fabrication; Gallium arsenide; Indium gallium arsenide; Light emitting diodes; Power generation; Resonance; Substrates; Vertical cavity surface emitting lasers; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-0637-1
Electronic_ISBN
978-1-4244-0637-1
Type
conf
DOI
10.1109/EDSSC.2007.4450101
Filename
4450101
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