Title :
The Fabrication and Characterization of InGaAs Oxide-Confined Resonant-Cavity Light-Emitting Diodes Grown on GaAs Substrate
Author :
Wang, Zhi-Wen ; Su, Yan-Kuin ; Huang, Chun-Yuan ; Chen, Wei-Cheng ; Yu, Hsin-Chieh
Author_Institution :
Nat. Cheng Kung Univ., Tainan
Abstract :
In this article, we have demonstrated the fabrication and characterization of InGaAs oxide-confined resonant-cavity light-emitting diodes (OC-RCLEDs) which emitted at 1125 nm. The output power can be improved by lateral oxidation from the sidewall of the RCLEDs due to the reduction of the light absorption beneath metal ring. The maximum output power of oxide-confined devices is 3.25 mW at 500 mA and the turn-on voltage is about 1.7 V.
Keywords :
cavity resonators; gallium arsenide; light absorption; light emitting diodes; GaAs substrate; InGaAs oxide-confined resonant-cavity light-emitting diodes OC-RCLED; lateral oxidation; light absorption; Apertures; Fabrication; Gallium arsenide; Indium gallium arsenide; Light emitting diodes; Power generation; Resonance; Substrates; Vertical cavity surface emitting lasers; Wet etching;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450101
