Title :
Paraelectric (Ba0.6Sr0.4)TiO3 thick films by direct-write
Author :
Kunduraci, M. ; Simon, W.K. ; Akdogan, E.K. ; Safari, A.
Author_Institution :
Rutgers Univ., Piscataway, NJ, USA
Abstract :
MicroPen™ direct-write technique has been used to fabricate polycrystalline paraelectric BST 60/40 11-140 μm thick films on alumina substrates. The dielectric properties of the thick films were studied as a function of film thickness, microstructure, and the state of residual stresses. Sin2Ψ X-ray analyses indicated a compressive state of stress in the films which decreased from ∼40 MPa at 36 μm to ∼15 MPa at 140 μm. The cubic→tetragonal transition temperature was found to be -10°C. No thickness dependence of the transition temperature was observed. Field induced polarization curves also indicate no apparent nonlinear behavior up to 4 kV/mm.
Keywords :
barium compounds; crystal microstructure; dielectric hysteresis; dielectric losses; dielectric materials; dielectric polarisation; internal stresses; permittivity; solid-state phase transformations; strontium compounds; thick films; (Ba0.6Sr0.4)TiO3; -10 degC; 11 to 140 mum; Al2O3; MicroPen™ direct-write technique; X-ray analyses; alumina substrates; compressive state; cubic→tetragonal transition temperature; dielectric properties; field induced polarization curves; microstructure; polycrystalline paraelectric thick films; residual stresses; Barium; Binary search trees; Capacitors; Dielectric losses; Dielectric substrates; Fabrication; Powders; Residual stresses; Strontium; Thick films;
Conference_Titel :
Applications of Ferroelectrics, 2004. ISAF-04. 2004 14th IEEE International Symposium on
Print_ISBN :
0-7803-8410-5
DOI :
10.1109/ISAF.2004.1418328
