Design, integration and characterization of PZT tunable FBAR

Author

Zinck, Christophe ; Defay, Emmanuel ; Volatier, Alexandre ; Caruyer, Gregory ; Tanor, D.P. ; Figuiere, Laurent

Author_Institution

RF Components Lab., CEA-DRT, Grenoble, France

fYear

2004

fDate

23-27 Aug. 2004

Firstpage

29

Lastpage

32

Abstract

This work presents the elaboration and the characterization of PZT film bulk acoustic resonators. Resonators are elaborated by deep reactive ion etching of silicon. Resonators present quite small electromechanical characteristics (k₃₃² and Q). Ferroelectric properties of the PZT thin film make possible the tuning of the frequency resonance. Butterfly dependencies were both observed for series and parallel resonances.

Keywords

Q-factor; acoustic resonators; bulk acoustic wave devices; ferroelectric materials; ferroelectric thin films; lead compounds; sputter etching; zirconium compounds; PZT; PZT thin film; PZT tunable FBAR; PZT tunable film bulk acoustic resonators; PbZrO3TiO3; butterfly dependence; deep reactive ion etching; electromechanical characteristics; ferroelectric properties; frequency resonance tuning; parallel resonance; series resonance; Annealing; Crystallization; Ferroelectric films; Ferroelectric materials; Film bulk acoustic resonators; Piezoelectric films; Polarization; Radio frequency; Sputtering; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2004. ISAF-04. 2004 14th IEEE International Symposium on

ISSN

1099-4734

Print_ISBN

0-7803-8410-5

Type

conf

DOI

10.1109/ISAF.2004.1418330

Filename

1418330