Title :
Annealing of Static data Errors in NAND-Flash memories
Author :
Schmidt, H. ; Walter, D. ; Bruggemann, M. ; Gliem, F. ; Harboe-Sorensen, R. ; Roos, P.
Author_Institution :
IDA, Inst. fur Datentechnik und Kommunikationsnetze, Tech. Univ. Braunschweig, Braunschweig, Germany
Abstract :
We tested the Static Errors response of NAND-Flash memories to heavy ions, and we observed error annealing during and after exposure. The amount of the annealing depends on the LET of the used ions.
Keywords :
NAND circuits; annealing; flash memories; NAND; annealing; flash memories; static data errors; Annealing; Electrons; Ion accelerators; MOSFETs; Nonvolatile memory; Radiation effects; Satellites; Testing; Tunneling; Voltage; Floating Gate memories; Heavy-Ion; Radiation effects;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
Print_ISBN :
978-1-4244-1704-9
DOI :
10.1109/RADECS.2007.5205505
