Experimental verification of Single Event interconnect crosstalk in a 90 nm CMOS technology

Author

Balasubramanian, A. ; Amusan, O.A. ; Bhuva, B.L. ; Reed, R.A. ; Sternberg, A.L. ; Massengill, L.W. ; McMorrow, D. ; Nation, S.A. ; Melinger, J.S.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

fYear

2007

fDate

10-14 Sept. 2007

Firstpage

1

Lastpage

7

Abstract

The presence of Single Event (SE) interconnect crosstalk has been demonstrated experimentally in the IBM 90 nm CMOS9SF process. Single and Two Photon pulsed laser experiments were performed to demonstrate this phenomenon. 3D mixed-mode simulations and modeling show SE interconnect crosstalk to depend on the interconnect length and on the amount of deposited charge. Simulations have been performed at the dual operating voltages used in this technology. Experimental and accompanying simulation results show this effect to increase SE susceptibility by increasing the vulnerable area and require evaluation to assure expected hardness levels.

Keywords

CMOS integrated circuits; integrated circuit interconnections; integrated circuit noise; radiation effects; CMOS integrated circuits; single event interconnect crosstalk; single event susceptibility; size 90 nm; CMOS technology; Capacitance; Computational modeling; Crosstalk; Integrated circuit interconnections; Optical pulses; Pulsed laser deposition; Radiation hardening; Single event upset; Voltage; complementary metal-oxide-semiconductor (CMOS); interconnect crosstalk; single event (SE); technology computer aided design (TCAD);

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on

Conference_Location

Deauville

ISSN

0379-6566

Print_ISBN

978-1-4244-1704-9

Type

conf

DOI

10.1109/RADECS.2007.5205507

Filename

5205507