DocumentCode
2980916
Title
Analysis of an EEHEMT Model for InP pHEMTs
Author
Chang, Y.H. ; Chang, J.J.
Author_Institution
Nat. Yunlin Univ. of Sci. & Technol., Douliou
fYear
2007
fDate
20-22 Dec. 2007
Firstpage
237
Lastpage
240
Abstract
This paper summarizes the procedure of extracting the parameters of the agilent EEHEMT model for InP pHEMTs without using any expensive extraction software. For DC parameters, we analyzed the equations associated with the parameters, and established an effective extraction procedure. For AC parameters, we studied the effects of AC parameters on S-parameters characteristics, and optimized these parameters using ADS. The simulation results were compared with the measured characteristics and the model accuracy had been confirmed.
Keywords
III-V semiconductors; high electron mobility transistors; indium compounds; semiconductor device models; AC parameters; DC parameters; EEHEMT model; S-parameters characteristics; pHEMT; Circuit simulation; Data mining; Equations; Frequency; Indium phosphide; Microwave devices; PHEMTs; Scattering parameters; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-0637-1
Electronic_ISBN
978-1-4244-0637-1
Type
conf
DOI
10.1109/EDSSC.2007.4450106
Filename
4450106
Link To Document