DocumentCode
2981117
Title
Random telegraph signals in proton irradiated CCDs and APS
Author
Hopkinson, G.R. ; Goiffon, V. ; Mohammadzadeh, A.
Author_Institution
Surrey Satellite Technol. Ltd., Sevenoaks, UK
fYear
2007
fDate
10-14 Sept. 2007
Firstpage
1
Lastpage
8
Abstract
Random telegraph dark signal fluctuations have been studied in two types of CCD and two types of CMOS active pixel sensor after proton irradiation at 1.5, 10 and 60 MeV. Time constants and activation energies were very similar, indicating a similar defect type. A large fraction of the defects are multi- rather than 2-level, suggesting a mechanism related to defect clusters being formed from initial single proton events.
Keywords
CCD image sensors; CMOS image sensors; proton effects; telegraphy; CCD sensor; CMOS sensor; activation energy; defect cluster; electron volt energy 1.5 MeV; electron volt energy 10 MeV; electron volt energy 60 MeV; proton irradiation; random telegraph signals; single proton event; time constant; Aerodynamics; Belts; Data assimilation; Earth; Electrons; Humans; Protons; Space vehicles; Storms; Telegraphy;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location
Deauville
ISSN
0379-6566
Print_ISBN
978-1-4244-1704-9
Type
conf
DOI
10.1109/RADECS.2007.5205515
Filename
5205515
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