DocumentCode :
2981205
Title :
A 77 GHz controllable gain low noise amplifier
Author :
Fahimnia, M. ; Safavi-Naieni, S. ; Mohammad-Taheri, M. ; Wang, Y.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
fYear :
2010
fDate :
11-13 May 2010
Firstpage :
96
Lastpage :
99
Abstract :
A 77 GHz low noise amplifier has been designed using common source topology implemented in low cost CMOS technology for various applications. A new method has been proposed for the design of the amplifier. In this method, input/output matching networks and transistor gate widths have been optimized for maximum gain and minimum noise figure. The design is flexible such that the LNA can operate in both high gain/high power and low gain/low power modes with low noise figure of less than 7 dB at 77 GHz. Amplifier gain is better than 18 dB consuming 60mW of dc power and it is better than 14.5 dB consuming 30 mW of dc power. The input and output return losses are better than 10 dB in the frequency range of 72 to 82 GHz.
Keywords :
CMOS image sensors; CMOS technology; Distributed parameter circuits; Frequency; Low-noise amplifiers; Metal-insulator structures; Microstrip; Millimeter wave technology; Noise figure; Semiconductor device modeling; CMOS; Common Source (CS); Low Noise amplifier (LNA); Microstrip Line (MSL); Millimeter-Wave (MMW); component; formatting;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering (ICEE), 2010 18th Iranian Conference on
Conference_Location :
Isfahan, Iran
Print_ISBN :
978-1-4244-6760-0
Type :
conf
DOI :
10.1109/IRANIANCEE.2010.5507097
Filename :
5507097
Link To Document :
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