DocumentCode
2981205
Title
A 77 GHz controllable gain low noise amplifier
Author
Fahimnia, M. ; Safavi-Naieni, S. ; Mohammad-Taheri, M. ; Wang, Y.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
fYear
2010
fDate
11-13 May 2010
Firstpage
96
Lastpage
99
Abstract
A 77 GHz low noise amplifier has been designed using common source topology implemented in low cost CMOS technology for various applications. A new method has been proposed for the design of the amplifier. In this method, input/output matching networks and transistor gate widths have been optimized for maximum gain and minimum noise figure. The design is flexible such that the LNA can operate in both high gain/high power and low gain/low power modes with low noise figure of less than 7 dB at 77 GHz. Amplifier gain is better than 18 dB consuming 60mW of dc power and it is better than 14.5 dB consuming 30 mW of dc power. The input and output return losses are better than 10 dB in the frequency range of 72 to 82 GHz.
Keywords
CMOS image sensors; CMOS technology; Distributed parameter circuits; Frequency; Low-noise amplifiers; Metal-insulator structures; Microstrip; Millimeter wave technology; Noise figure; Semiconductor device modeling; CMOS; Common Source (CS); Low Noise amplifier (LNA); Microstrip Line (MSL); Millimeter-Wave (MMW); component; formatting;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering (ICEE), 2010 18th Iranian Conference on
Conference_Location
Isfahan, Iran
Print_ISBN
978-1-4244-6760-0
Type
conf
DOI
10.1109/IRANIANCEE.2010.5507097
Filename
5507097
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