Title :
Optically Pumped Edge-Emitting GaAs-Based Laser With Direct Orange Emission
Author :
Toikkanen, Lauri ; Harkonen, A. ; LyytikaInen, J. ; Leinonen, Tomi ; Laakso, Antti ; Tukiainen, A. ; Viheriala, Jukka ; Bister, M. ; Guina, M.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
Abstract :
Room temperature lasing operation at 599 nm for a AlGaInP/AlInP/GaAs edge-emitting laser structure is reported. The structure was grown on GaAs substrate and pumped optically with a 532 nm Q-switched laser. The lasing threshold for a 2 mm long and 25 μm wide ridge waveguide structure was 30 mW of average pump power. The orange output beam had an optical spectral width of 1.7 nm.
Keywords :
III-V semiconductors; Q-switching; aluminium compounds; gallium arsenide; indium compounds; laser beams; optical pumping; ridge waveguides; semiconductor lasers; waveguide lasers; AlGaInP-AlInP-GaAs; AlGaInP/AlInP/GaAs edge-emitting laser structure; GaAs substrate; Q-switched laser; average pump power; direct orange emission; lasing threshold; optical spectral width; optically pumped edge-emitting GaAs-based laser; orange output beam; power 30 mW; ridge waveguide structure; room temperature lasing operation; size 1.7 nm; size 2 mm; size 25 mum; temperature 293 K to 298 K; wavelength 532 nm; wavelength 599 nm; Gallium arsenide; Measurement by laser beam; Microchip lasers; Optical pumping; Pump lasers; Waveguide lasers; Edge-emitting-lasers; optically-pumped lasers; orange lasers; semiconductor lasers; visible lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2013.2294726
