Title :
Proton and gamma radiation of 0.13 µm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation
Author :
Put, S. ; Qureshi, M. ; Simoen, E. ; Van Huylenbroeck, S. ; Venegas, R. ; Claeys, C. ; Van Uffelen, M. ; Leroux, P. ; Berghmans, F.
Abstract :
The effect of airgap deep trench isolation on the radiation behavior of a 0.13 mum NPN SiGe:C HBT is studied and compared with standard components with conventional junction isolation. Proton and gamma irradiations are performed. The only effect discerned on this technology after a proton irradiation of 7 kGy is a decrease in collector current at higher base-emitter voltages. After 100 kGy gamma irradiation, no change in collector current is observed. However, the base current increases severely at lower base-emitter voltages. In forward-mode the base current degradation of devices featuring deep trench isolation is higher compared to conventional devices. In reverse-mode the effect is opposite: degradation is higher for conventional devices. The difference in degradation between the two isolation types is smaller in forward-mode operation.
Keywords :
Ge-Si alloys; carbon; gamma-ray effects; heterojunction bipolar transistors; isolation technology; proton effects; radiation hardening (electronics); SiGe:C; airgap deep trench isolation; gamma radiation; heterojunction bipolar transistors; proton radiation; radiation hardening; size 0.13 mum; BiCMOS integrated circuits; Degradation; Diffusion tensor imaging; Gamma rays; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Protons; Silicon germanium; Thermal resistance; Deep trench isolation; Gamma irradiation Heterojunction Bipolar Transistor; Proton irradiation;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
Print_ISBN :
978-1-4244-1704-9
DOI :
10.1109/RADECS.2007.5205523
