Title :
A 10 Gb/s 16:1 multiplexer and 10 GHz clock synthesizer in 0.25 /spl mu/m SiGe BiCMOS
Author :
Hong-Ih Cong ; Logan, S.M. ; Loinaz, M.J. ; O´Brien, K.J. ; Perry, E.E. ; Polhemus, G.D. ; Scoggins, J.E. ; Snowdon, K.P. ; Ward, M.G.
Author_Institution :
Agere Syst., Murray Hill, NJ, USA
Abstract :
A 10 Gb/s 16:1 multiplexer, 10 GHz clock generator, and 6/spl times/16 b input data buffer are integrated in SiGe BICMOS. The chip exhibits SONET generated jitter of 0.048 UI/sub pp/ with 0.04 dB maximum jitter peaking and dissipates 1.6 W from 3.3 V. The input data buffer accommodates /spl plusmn/2.4 ns input data phase drift at 622 Mb/s.
Keywords :
BiCMOS digital integrated circuits; Ge-Si alloys; frequency synthesizers; jitter; multiplexing equipment; semiconductor materials; 0.25 micron; 1.6 W; 10 GHz; 10 Gbit/s; 3.3 V; 622 Mbit/s; BiCMOS; SONET; SiGe; clock synthesizer; input data buffer; input data phase drift; maximum jitter peaking; multiplexer; BiCMOS integrated circuits; Clocks; Fixtures; Germanium silicon alloys; Multiplexing; Optical transmitters; Packaging; Silicon germanium; Synthesizers; Testing;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912555
