Title :
A 10 kframe/s 0.18 /spl mu/m CMOS digital pixel sensor with pixel-level memory
Author :
Kleinfelder, S. ; Suki-Iwan Lim ; Xinqiao Liu ; El Gamal, A.
Author_Institution :
Stanford Univ., CA, USA
Abstract :
A 352/spl times/288 pixel CMOS image sensor with pixel-level single-slope ADC and 8 b 3T DRAM cells achieves 9.4/spl times/9.4 /spl mu/m/sup 2/ pixel in standard 0.18 /spl mu/m CMOS. Continuous 10 kframes/s (1 Gpixels/s) 8 b per pixel snapshot image acquisition is achieved with 0.1% rms temporal noise and 0.18% rms FPN.
Keywords :
CMOS digital integrated circuits; CMOS image sensors; CMOS memory circuits; DRAM chips; analogue-digital conversion; integrated circuit noise; 0.18 micron; 288 pixel; 352 pixel; 8 bit; CMOS digital pixel sensor; DRAM cell; fixed pattern noise; image acquisition; pixel-level memory; single-slope ADC; temporal noise; CMOS image sensors; CMOS technology; Circuit noise; Counting circuits; Image sensors; MOS devices; Noise reduction; Pixel; Sensor arrays; Timing;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912558
