Total Ionizing Dose effects on 4Mbit Phase Change Memory arrays

Author

Gasperin, Alberto ; Wrachien, Nicola ; Cester, Andrea ; Paccagnella, Alesandro ; Ottogalli, Federica ; Corda, Ugo ; Fuochi, Piergiorgio ; Lavalle, Marco

Author_Institution

Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy

fYear

2007

fDate

10-14 Sept. 2007

Firstpage

1

Lastpage

8

Abstract

We investigate total ionizing dose effects on 4Mbit phase change memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the bit-line and the word-line selection MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations.

Keywords

MOSFET; phase change memories; RESET operations; SET operations; bit-line selection MOSFET; electron volt energy 8 MeV; ionizing radiation; phase change memory arrays; total ionizing dose effects; word-line selection MOSFET; Amorphous materials; CMOS technology; Electric resistance; Flash memory; Integrated circuit technology; Ionizing radiation; Phase change materials; Phase change memory; Phased arrays; Radiation effects; Chalcogenide; GST; Non-Volatile Memories; Phase Change Memory; Radiation effects; Total Ionizing Dose;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on

Conference_Location

Deauville

ISSN

0379-6566

Print_ISBN

978-1-4244-1704-9

Type

conf

DOI

10.1109/RADECS.2007.5205536

Filename

5205536