Title :
A 256 kb 3.0 V 1T1MTJ nonvolatile magnetoresistive RAM
Author :
Naji, P.K. ; Durlam, M. ; Tehrani, S. ; Calder, J. ; DeHerrera, M.F.
Author_Institution :
Phys. Sci. Res. Labs., Motorola Labs., Chandler, AZ, USA
Abstract :
Magnetoresistive random access memory (MRAM) is based on magnetic memory elements integrated with CMOS. Key attributes of MRAM technology are nonvolatility and unlimited read and program endurance. A 256 kb nonvolatile MRAM is based on a memory cell defined by a single transistor (1T) and a single magnetic tunnel junction (MTJ) with read and write cycles <50 ns. The memory organization is 16 k×16. Measured read power consumption is 24 mW at 3 V and 20 MHz.
Keywords :
CMOS memory circuits; magnetic storage; magnetoresistive devices; random-access storage; 0.6 micron; 20 MHz; 24 mW; 256 kbit; 3 V; CMOS technology; MRAM technology; magnetic memory elements; magnetoresistive random access memory; nonvolatile magnetoresistive RAM; power consumption; single transistor/single magnetic tunnel junction cell; unlimited program endurance; unlimited read endurance; Magnetic materials; Magnetic separation; Magnetic tunneling; Magnetoresistance; Nonvolatile memory; Polarization; Random access memory; Read-write memory; Switches; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912570
