Title :
Mismatched InGaAs photovoltaic devices thermophotovoltaic power systems
Author :
Wilt, David M. ; Brinker, David J. ; Fatemi, Navid S. ; Hoffman, Richard W., Jr. ; Jenkins, Phillip P. ; Lowe, Roland
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
Low bandgap photovoltaic devices are required for the development of thermophotovoltaic power conversion at moderate temperatures. We have produced InxGa1-xAs photovoltaic n/p devices on InP with bandgaps ranging from 0.75 eV to 0.60 eV. Testing under a filtered 1500°K blackbody emitter, the 0.75 eV displayed an 18.3% conversion efficiency and the 0.60 eV device had a 6% efficiency. The devices were also tested at temperatures ranging from 25°C to 100°C. The temperature coefficient of output power increased dramatically as the bandgap decreased. Testing under rare-earth doped YAG selective emitters demonstrated the ability of these emitters to produce narrow spectral emissions
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photovoltaic cells; semiconductor device testing; solar cells; 1500 K; 18.3 percent; 25 to 100 C; 6 percent; InGaAs-InP; conversion efficiency; filtered blackbody emitter; low bandgap photovoltaic devices; mismatched InGaAs photovoltaic devices; narrow spectral emissions; output power; rare-earth doped YAG selective emitters; temperature coefficient; thermophotovoltaic power systems; Band pass filters; Indium gallium arsenide; Lattices; NASA; Photonic band gap; Photovoltaic systems; Solar power generation; Temperature dependence; Temperature distribution; Testing;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520554
