DocumentCode
2981725
Title
Test procedures for proton-induced single event latchup in space environments
Author
Felix, James A. ; Schwank, James R. ; Shaneyfelt, Marty R. ; Baggio, Jacques ; Paillet, Philippe ; Ferlet-Cavrois, Veronique ; Dodd, Paul E. ; Girard, Sylvain ; Blackmore, Ewart W.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
2007
fDate
10-14 Sept. 2007
Firstpage
1
Lastpage
5
Abstract
The effect of high energy proton irradiation and angle of incidence on single-event latchup (SEL) hardness is investigated as a function of temperature and power supply voltage to determine worst-case hardness assurance test conditions for space environments. SRAMs from several vendors were characterized for single-event latchup SEL hardness at proton energies from 20 to 500 MeV at temperatures of 25 and 80degC, and at both normal and grazing angles of incidence. For all SRAMs investigated, the largest SEL cross section is observed for irradiation with protons with energies larger than 200 MeV. In addition, it is shown that for proton with energies ges 400 MeV, there is not a significant increase in SEL cross section for grazing angles of incidence compared to normal incidence irradiation. Based on the results of several years of research, in addition to these new results, we propose a hardness assurance test procedure for qualifying parts for use in proton-rich space environments.
Keywords
SRAM chips; proton effects; radiation hardening (electronics); SRAMs; electron volt energy 20 MeV to 500 MeV; high energy proton irradiation; normal incidence irradiation; proton-induced single event latchup hardness; proton-rich space environments; temperature 25 C to 80 C; Guidelines; Ionization; Laboratories; Power supplies; Protons; Random access memory; Single event upset; Temperature; Testing; Voltage; COTS; SEL; SEU; SRAM; hardness assurance; proton; radiation effects; single event;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location
Deauville
ISSN
0379-6566
Print_ISBN
978-1-4244-1704-9
Type
conf
DOI
10.1109/RADECS.2007.5205542
Filename
5205542
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