DocumentCode :
2981760
Title :
The electrical characteristics of the (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 thin film using oxygen plasma surface treatment
Author :
Chen, Kai-Huang ; Chang, Chia-How ; Chen, Ying-Chung ; Wang, Chih-Ming
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear :
2004
fDate :
23-27 Aug. 2004
Firstpage :
173
Lastpage :
176
Abstract :
In this work, the effects of plasma surface treatment, using oxygen gas, of Ba0.7Sr0.3Ti0.9Zr0.1O3 (BSTZ) film on the electrical characteristic of a Al/BSTZ/Pt capacitor structure were investigated in detail. Experiment results showed that the leakage current density of the BSTZ thin film within oxygen plasma treatment was decreased as much as three times in magnitude, as compared to that of the BSTZ film without oxygen plasma treatment. In addition, the dielectric constant of BSTZ film was increased from 190 to 260 within oxygen plasma treatment. These results clearly indicated that the electrical characteristics of BSTZ film were improved effectively within oxygen plasma surface treatment.
Keywords :
aluminium; barium compounds; ferroelectric thin films; interface structure; leakage currents; permittivity; plasma materials processing; platinum; strontium compounds; surface treatment; Al-Ba0.7Sr0.3Ti0.9Zr0.1O3 -Pt; capacitor structure; dielectric constant; electrical characteristics; leakage current density; oxygen plasma surface treatment; thin film; Capacitors; Dielectric constant; Dielectric thin films; Electric variables; Leakage current; Plasma density; Plasma properties; Strontium; Surface treatment; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2004. ISAF-04. 2004 14th IEEE International Symposium on
ISSN :
1099-4734
Print_ISBN :
0-7803-8410-5
Type :
conf
DOI :
10.1109/ISAF.2004.1418364
Filename :
1418364
Link To Document :
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