Title :
Heavy ion SEE studies on 4-Gbit NAND-Flash memories
Author :
Schmidt, H. ; Walter, D. ; Bruggemann, M. ; Gliem, F. ; Harboe-Sorensen, R. ; Virtanen, A.
Author_Institution :
IDA, Tech. Univ. Braunschweig, Braunschweig, Germany
Abstract :
Heavy ion SEE studies on three 4-Gbit NAND-flash memory types were performed at the RADEF facility at the University of Jyvaskyla, Finland with particular emphasis on SEFI differentiation. An error classification for complex memory devices is introduced, and respective cross sections are reported.
Keywords :
NAND circuits; flash memories; NAND-flash memories; SEFI differentiation; complex memory devices; error classification; heavy ion; storage capacity 4 Gbit; Communication system control; Control systems; Displays; Electronic equipment testing; Error correction; Radiation effects; Space technology; System testing; Test equipment; Weight control; Floating Gate memories; Heavy-Ion; Radiation effects;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
Print_ISBN :
978-1-4244-1704-9
DOI :
10.1109/RADECS.2007.5205555
