Title :
Degradation of RH1056 parameters at low total dose
Author :
Harris, Richard D. ; Rax, Bernard G. ; McClure, Steven S. ; Johnston, Allan H.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
The behavior of the RH1056 JFET input operational amplifier from linear technologies following Co-60 irradiation has been studied at both high and low dose rates. A significant amount of unexpected degradation of the input offset voltage for this radiation hardened part is observed at low doses. The amount of degradation peaks between about 2 and 6 krad(Si) depending on irradiation conditions. At higher doses, above about 20 krad(Si), the input offset voltage recovers to near pre-irradiation values. This degradation at low doses is not anticipated by the manufacturer´s data sheet and could present unexpected surprises for missions operating in the total dose range of 2 - 10 krad(Si). This performance also suggests some potential issues with the typical hardness assurance methodology of step-level testing if the steps are too large.
Keywords :
junction gate field effect transistors; operational amplifiers; radiation effects; Co-60 irradiation; JFET input operational amplifier; RH1056 parameters; hardness assurance methodology; input offset voltage; linear technology; step-level testing; Degradation; Ionizing radiation; Manufacturing; NASA; Operational amplifiers; Propulsion; Radiation hardening; Space technology; Testing; Voltage; JFET Input Operational Amplifier; RH1056; TID; Total Dose;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
Print_ISBN :
978-1-4244-1704-9
DOI :
10.1109/RADECS.2007.5205557
