Detection of a gaseous organophosphorus compound using a supported copper + cuprous oxide island film

Author

Kolesar, Edward S.

Author_Institution

US Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA

fYear

1988

fDate

23-27 May 1988

Firstpage

4

Abstract

The modification of electronic properties of a dielectric-supported island film of copper plus cuprous oxide that is exposed to small concentrations (ppm levels) of diisopropyl methylphosphonate (DIMP) is reported. Electron microscopy and electron diffraction measurements confirmed the film´s structure and composition. Auger spectroscopy verified the absorption of DIMP. Isothermal direct current measurements suggest a space-charge conduction mechanism whereby carriers are thermally excited, field induced, and transported via shallow trapping and impurity centers

Keywords

chemical variables measurement; copper; copper compounds; electric sensing devices; Auger spectroscopy; Cu-Cu₂O film; DIMP; absorption of DIMP; dielectric-supported island film; diisopropyl methylphosphonate; electron diffraction measurements; electron microscopy; gas detectors; gas sensors; gaseous organophosphorus compound; isothermal DC current measurements; modification of electronic properties; operation; small concentrations; space-charge conduction mechanism; Absorption; Copper; Current measurement; Dielectric films; Dielectric measurements; Diffraction; Electron microscopy; Isothermal processes; Spectroscopy; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace and Electronics Conference, 1988. NAECON 1988., Proceedings of the IEEE 1988 National

Conference_Location

Dayton, OH

Type

conf

DOI

10.1109/NAECON.1988.194986

Filename

194986