• DocumentCode
    2982112
  • Title

    Enhanced piezoelectric properties of KNbO3 crystals by domain engineering

  • Author

    Wada, S. ; Muraoaka, K. ; Kakemoto, H. ; Tsurumi, T. ; Kumagai, H.

  • Author_Institution
    Dept. of Metallurgy & Ceramics Sci., Tokyo Inst. of Technol., Japan
  • fYear
    2004
  • fDate
    23-27 Aug. 2004
  • Firstpage
    221
  • Lastpage
    224
  • Abstract
    Potassium niobate (KNbO3) single crystals were grown by a TSSG method. At first, the electric field was applied along [001]c (cubic notification system) direction of KNbO3 crystals to induce the engineered domain configurations into KNbO3 crystals. Prior to domain engineering, the piezoelectric properties of [001]c oriented KNbO3 single domain crystals were measured. These measurement values were completely consisted with the calculated apparent d31 and d32. Finally, the engineered domain configurations were induced into KNbO3 crystals. As a result, piezoelectric properties increased with decreasing domain sizes of the engineered domain configuration. However, the symmetry of the KNbO3 crystals was mm2, and there were four kinds of domain structures such as 90°, 180°, 60° and 120° domains. Thus, the engineered domain structure induced in this study was very complicated, and the piezoelectric properties were also depended on domain pattern and kinds of domain walls.
  • Keywords
    domains; ferroelectric materials; piezoelectric materials; potassium compounds; KNbO3; TSSG method; cubic notification system; domain engineering; domain sizes; domain structures; domain walls; electric field; engineered domain configurations; enhanced piezoelectric properties; single domain crystals; symmetry; Barium; Bismuth; Ceramics; Chemicals; Crystalline materials; Crystals; Environmental factors; Environmentally friendly manufacturing techniques; Ferroelectric materials; Niobium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2004. ISAF-04. 2004 14th IEEE International Symposium on
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-8410-5
  • Type

    conf

  • DOI
    10.1109/ISAF.2004.1418376
  • Filename
    1418376