Title :
Chemical Doping of Graphene Nanoribbon Field-Effect Devices
Author :
Lin, Yu-Ming ; Farmer, Damon B. ; Tulevski, George S. ; Xu, Sheng ; Gordon, Roy G. ; Avouris, Phaedon
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY
Abstract :
In this paper, the first air-stable n-type and p-type chemical doping in graphene via charge transfer have been demonstrated, and shown that the doping does not deteriorate the majority carrier mobility. The top-gated graphene structures have been further fabricated and demonstrated p-n junction in graphene nanoribbon (GNR) devices.
Keywords :
carrier mobility; charge exchange; doping; field effect devices; graphene; p-n junctions; C; charge transfer; chemical doping; field-effect devices; graphene nanoribbon; majority carrier mobility; p-n junction; top-gated graphene structures; Annealing; Atomic layer deposition; Charge transfer; Chemicals; Doping; Electron mobility; Lattices; Nanoscale devices; P-n junctions; Voltage;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800721
