Current-carrying Capacity of Long & Short Channel 2D Graphene Transistors

The fundamental current-carrying capacity of graphene is found to be much higher than tradiational FETs (MOSFETs, pHEMTs, etc), matched only by the I-V nitride HEMTs. Currently, the device structures investigated are rather primitive and do not allow for efficient heat removal - similar effects were observed for CNTs a decade ago. However, with top-gate technology (for high 2D carrier densities with smaller gate voltages), efficient heat removal (to prevent burnout), and improvement of the purity levels of the gate dielectrics (to achieve current saturation at lower biases and thus less heat due to I_dsxV_ds product lowering), 2D graphene and GNR based FETs can be expected to surpass most traditional (non-nitride) FETs in their current-carrying capacity.