Title :
Ferroelectric non-volatile memory
Author :
Evans, Joe ; Womack, Richard ; Toisch, D.
Author_Institution :
Krysalis Corp., Albuquerque, NM, USA
Abstract :
The development of a monolithic 512-bit ferroelectric nonvolatile memory addressed by CMOS circuitry is discussed. This development has demonstrated technical feasibility and has allowed the production of the first 16 K universal random access memory called UniRAM. The 16 K UniRAM is intended to have a 100-ns Read/Write access time, unlimited write capability, and function over the military temperature range. The device characteristics and future applications as related to the aerospace industry are discussed
Keywords :
CMOS integrated circuits; ferroelectric devices; integrated memory circuits; random-access storage; 100 ns; 16 K universal random access memory; 16 kbits; 512 bits; CMOS circuitry; NVRAM; UniRAM; access time; aerospace industry; applications; device characteristics; ferroelectric nonvolatile memory; military temperature range; nonvolatile RAM; technical feasibility; unlimited write capability; write time; CMOS technology; Capacitors; Circuits; Ferroelectric materials; Iron; Magnetic cores; Nonvolatile memory; Random access memory; Space technology; Voltage;
Conference_Titel :
Aerospace and Electronics Conference, 1988. NAECON 1988., Proceedings of the IEEE 1988 National
Conference_Location :
Dayton, OH
DOI :
10.1109/NAECON.1988.194996
