DocumentCode :
2982407
Title :
Improved 150°C Retention in Hf0.3O0.5N0.2 Memory Device with Low Voltage and Fast Writing
Author :
Lin, S.H. ; Yang, H.J. ; Kao, H.L. ; Yeh, F.S. ; Chin, Albert
Author_Institution :
E.E. Dept., Nat. Tsing Hua Univ., Hsinchu
fYear :
2008
fDate :
23-25 June 2008
Firstpage :
61
Lastpage :
62
Abstract :
At 150degC under a fast 100 mus and low plusmn9 V P/E voltage, the [TaN-Ir3Si]-HfAlO-LaAlO3-Hf0.3O0.5N0.2-HfAlO-SiO2-Si memory device shows good device integrity of a 3.2 V initial DeltaVth and 2.4 V 10-year extrapolated retention. This only 25% retention decay at 150degC was achieved by double quantum barriers confining trapped carriers in deep Hf0.3O0.5N0.2 well.
Keywords :
hafnium compounds; low-power electronics; semiconductor storage; Hf0.3O0.5N0.2; double quantum barriers; extrapolated retention; fast writing; low voltage; memory device; retention decay; temperature 150 degC; time 100 mus; trapped carriers; voltage 2.4 V; voltage 3.2 V; Carrier confinement; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Lead compounds; MONOS devices; Network address translation; Nonvolatile memory; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2008.4800734
Filename :
4800734
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2982407
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