Source dependence and technology scaling effects on the radiation tolerance of SiGe HBTs at extreme dose and fluence levels

We investigate the response of SiGe HBTs exposed to high fluence and total dose levels of proton, neutron and gamma irradiation typically encountered in high energy physics experiments. The transistor radiation tolerance is evaluated via a comparison of excess base current, base current ideality, and current gain degradation. The results indicate that the observed device degradation may be dominated either by conventional SRH recombination or radiation-induced carrier tunneling, depending on the technology generation and radiation source.