Title :
Structural Sensitivity of Interband Tunnel Diodes for SRAM
Author :
Sutar, Surajit ; Zhang, Qin ; Seabaugh, Alan
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN
Abstract :
Here, we present a study to outline the design space and trade-offs for high PVCR, low-voltage, low-current tunnel diodes with best results for peak currents and voltages being 4.3 nA/mum2, 50 mV with PVCR of 15, and demonstrate a fabrication process yielding submicron interband tunnel diodes for the first time. The PVCR of submicron diodes is observed to degrade for submicron device mesas indicating the need for passivation to maintain the PVCR.
Keywords :
III-V semiconductors; SRAM chips; tunnel diodes; III-V channel MOSFET; SRAM; high peak-to-valley- current ratio; interband tunnel diodes; structural sensitivity; tunneling-based static random access memory; voltage 50 mV; Degradation; Diodes; Doping; Gold; Lithography; Passivation; Random access memory; Tunneling; Voltage; Wet etching;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800736
