• DocumentCode
    2982437
  • Title

    Structural Sensitivity of Interband Tunnel Diodes for SRAM

  • Author

    Sutar, Surajit ; Zhang, Qin ; Seabaugh, Alan

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    65
  • Lastpage
    66
  • Abstract
    Here, we present a study to outline the design space and trade-offs for high PVCR, low-voltage, low-current tunnel diodes with best results for peak currents and voltages being 4.3 nA/mum2, 50 mV with PVCR of 15, and demonstrate a fabrication process yielding submicron interband tunnel diodes for the first time. The PVCR of submicron diodes is observed to degrade for submicron device mesas indicating the need for passivation to maintain the PVCR.
  • Keywords
    III-V semiconductors; SRAM chips; tunnel diodes; III-V channel MOSFET; SRAM; high peak-to-valley- current ratio; interband tunnel diodes; structural sensitivity; tunneling-based static random access memory; voltage 50 mV; Degradation; Diodes; Doping; Gold; Lithography; Passivation; Random access memory; Tunneling; Voltage; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800736
  • Filename
    4800736
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2982437