Title :
Optimization of high tunability barium strontium titanate thin films grown by RF magnetron sputtering
Author :
Pervez, Nadia K. ; Hansen, Peter J. ; York, Robert A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Barium strontium titanate is a solid solution perovskite with a field-dependent permittivity. At microwave frequencies, its tunable dielectric constant and low loss make it a competitive choice for varactors and other tunable circuit elements. Much attention has been focused on the production of low-loss films for such applications, with little emphasis on how the film properties contribute to the circuit loss. When tunable elements are implemented in circuits, electrode loss dominates over film loss. In applications such as phase shifters, where cascaded tuning elements provide a predetermined amount of tuning, circuit designs using high tunability films minimize the number of tuning elements required, resulting in an overall reduction in circuit loss. When growth conditions are optimized for superior electrical properties, tunability and film loss are the two quantities of interest. By changing the oxygen partial pressure during growth, the amount of excess Ti incorporated into the film is changed. Films with higher excess Ti contents exhibit lower losses, higher breakdown voltages, and lower permittivities than more stoichiometric films. While all of the films approach the same high-field capacitance limit, the total tunability is determined not only by the zero-field permittivity but also by the breakdown voltage; a device must be able to tolerate sufficient applied bias to reach its high-field capacitance limit. By balancing these factors, we have produced capacitors with an unprecedented 13.71:1 (92.7%) tuning ratio at an applied field of 4.7 MV/cm.
Keywords :
barium compounds; capacitance; capacitors; dielectric losses; dielectric thin films; electric breakdown; electrical conductivity; permittivity; solid solutions; sputter deposition; stoichiometry; strontium compounds; Ba0.5Sr0.5Ti1.02O3; RF magnetron sputtering; breakdown voltages; capacitors; cascaded tuning elements; circuit designs; circuit loss; electrical properties; electrode loss; field-dependent permittivity; high-field capacitance limit; low-loss films; microwave frequencies; phase shifters; solid solution perovskite; stoichiometric films; thin films; tunable circuit elements; tunable dielectric constant; tuning ratio; varactors; zero-field permittivity; Barium; Capacitance; Circuit optimization; Dielectric thin films; Permittivity; Radio frequency; Sputtering; Strontium; Titanium compounds; Tunable circuits and devices;
Conference_Titel :
Applications of Ferroelectrics, 2004. ISAF-04. 2004 14th IEEE International Symposium on
Print_ISBN :
0-7803-8410-5
DOI :
10.1109/ISAF.2004.1418390