Title :
Temperature effect on the heavy-ion induced Single-Event Transients propagation on a CMOS Bulk 0.18 µm inverters chain
Author :
Truyen, D. ; Boch, J. ; Sagnes, B. ; Vaillé, J-R ; Renaud, N. ; Leduc, E. ; Briet, M. ; Heng, C. ; Mouton, S. ; Saigné, F.
Abstract :
In this paper, a study by device simulation of the heavy-ion induced Single-Event Transients (SET) is realized in the 218-418 K range in order to determine the temperature effect on a CMOS bulk 0.18 mum inverter. An investigation of the SET propagation though a 10-inverters logic chain is performed, and the threshold LET (LETth) required for unattenuated propagation through the inverters chain is determined. The LETth is calculated for two different location of the heavy ion impact and for three temperatures. An increase of the sensitivity is found when the temperature raise from 218 to 418 K.
Keywords :
CMOS integrated circuits; invertors; ion beam effects; technology CAD (electronics); CMOS bulk inverters; heavy-ion effects; single-event transients propagation; technology CAD; temperature 218 K to 418 K; CMOS logic circuits; CMOS technology; Logic devices; Poisson equations; Pulse width modulation inverters; Semiconductor process modeling; Space vector pulse width modulation; Temperature dependence; Temperature distribution; Temperature sensors; CMOS; LET; Single event transient (SET); heavy-ion; technology computer-aided design (TCAD) simulation; temperature dependence;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
Print_ISBN :
978-1-4244-1704-9
DOI :
10.1109/RADECS.2007.5205575
