Title :
A Comparison Of In/sub 0.5/Ga/sub 0.5/ / GaAs:C Single- And Double-heterojunction Bipolar Transistors Grown By Lp-mocvd
Author :
Hanson, A.W. ; Stockman, S.A. ; Stillman, G.E.
Author_Institution :
Center for Compound Semiconductor Microelectronics
Keywords :
Bipolar transistors; Carbon dioxide; Conducting materials; Contracts; Etching; Fabrication; Frequency; Gallium arsenide; Heterojunctions; Plasma applications;
Conference_Titel :
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location :
Cambridge, MA, USA
DOI :
10.1109/DRC.1992.671882
